[1]
Novosyadlyy, S. and Bosats'kyy , A. 2015. Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits. Physics and Chemistry of Solid State. 16, 1 (Mar. 2015), 221–229. DOI:https://doi.org/10.15330/pcss.16.1.221-229.