Novosyadliy, S. P., V. M. Lukovkin, R. Melnyk, and A. V. Pavlyshyn. “Physical-Topology Modeling of Silicon Gallium Arsenide Schottky Transistor of Submicron Technology LSI”. Physics and Chemistry of Solid State 21, no. 2 (June 15, 2020): 361–364. Accessed November 21, 2024. https://personnel.pnu.edu.ua/index.php/pcss/article/view/3014.