Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution

L.P. Romaka; P.-F. Rogl; A.M. Нoryn; V.Ya. Krayovskyy; Yu.V. Stadnyk; V.V. Romaka

doi:10.15330/pcss.17.2.212-221

Authors

L.P. Romaka Ivan Franko National University of Lviv
P.-F. Rogl Universitӓt Wien
A.M. Нoryn Ivan Franko National University of Lviv
V.Ya. Krayovskyy National University “Lvivska Politechnika”
Yu.V. Stadnyk Ivan Franko National University of Lviv
V.V. Romaka National University “Lvivska Politechnika”

DOI:

https://doi.org/10.15330/pcss.17.2.212-221

Keywords:

crystal and electronic structures, conductivity, thermopower coefficient

Abstract

The features of structural, energy state and electrokinetic characteristics were investigated for Hf_1‑xTm_xNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a crystallographic site of Hf (5d²6s²) atoms by Ni (3d⁸4s²) ones up to ~ 1 % that generates in the crystal structural defects of donor nature. It was shown that introduction of Tm atoms ordered crystal structure (“healing” of structural defects). It was established mechanisms of simultaneous generation of structural defects as acceptors by substitution of Hf (5d²6s²) by Tm (4f¹³5d⁰6s²) atoms, and the donor nature defects as a result of the appearance of vacancies in the Sn (4b) atoms sites, which determines the mechanisms of conductivity for Hf_1-xTm_xNiSn.

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