Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits

S.P. Novosyadlyj; S.I. Boyko

doi:10.15330/pcss.17.2.281-285

Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits

Authors

S.P. Novosyadlyj Vasyl Stefanyk Precarpathian National University
S.I. Boyko Vasyl Stefanyk Prekarpathian University

DOI:

https://doi.org/10.15330/pcss.17.2.281-285

Keywords:

bipolar transistor, heterojunction, gallium arsenide

Abstract

This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance. Numerical simulation of HBT in ring oscillator mode showed that the delay of the BT with 1x2 µm emitter can be reduced to 8 ps at a maximum current of 10⁵ A/cm². HBT with one and two (emitter and collector) heterojunctions showed 24 ps delay at 9.1 mW and 17 ps at 40 mW.

References

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[5] B. Lia, S. Prasada, L.W. Yangb, S.C. Wangc, Solid-State Electronics 43(4), 839 (1999).

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Published

2016-06-15

How to Cite

Novosyadlyj, S., & Boyko, S. (2016). Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits. Physics and Chemistry of Solid State, 17(2), 281–285. https://doi.org/10.15330/pcss.17.2.281-285