Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure

V.V. Romaka; P. Rogl; L.P. Romaka; Yu.V. Stadnyk; R.O. Korzh; V.Ya. Krayovskyy; T.M. Kovbasuk; H.V. Tsygylyk

doi:10.15330/pcss.16.2.335-340

Authors

V.V. Romaka National University “Lvivska Politechnika”
P. Rogl Institut fur Physikalische Chemie, Universitet Wien
L.P. Romaka Ivan Franko National University of Lviv
Yu.V. Stadnyk Ivan Franko National University of Lviv
R.O. Korzh National University “Lvivska Politechnika”
V.Ya. Krayovskyy National University “Lvivska Politechnika”
T.M. Kovbasuk National University “Lvivska Politechnika”
H.V. Tsygylyk National University “Lvivska Politechnika”

DOI:

https://doi.org/10.15330/pcss.16.2.335-340

Keywords:

semiconductor, electrical conduction, electronic structure

Abstract

The peculiarities of the crystalandelectronicstructureof V_1-xTi_xFeSb, х = 0 – 0,20, semiconductor solid solution wereinvestigated. Themechanismofgenerationofstructuraldefectsofacceptoranddonornatureisdescribed. In particular the nature of donors in n-VFeSb was established (“a priori doping”) as a result of presence of vacancies in Sb atomic site (4b). The obtained result lays in the basis of the technology for obtaining thermoelectric materials based on n-VFeSb with maximal efficiency of thermal to electrical energy conversion.

References

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