Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics

Authors

  • V. А. Romaka Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics, NAS of Ukraine
  • P. Rogl Institut fur Physikalische Chemie, Universitet Wien
  • Yu. V. Stadnyk Ivan Franko National University of Lviv
  • L. P. Romaka Ivan Franko National University of Lviv
  • R. O. Korzh National University “Lvivska Politechnika”
  • D. Kaczorowski Institute of Low Temperature and Structure Research Polish Academy of Sciences
  • V. Ya. Krayovskyy National University “Lvivska Politechnika”
  • A. M. Нoryn Ivan Franko National University of Lviv

DOI:

https://doi.org/10.15330/pcss.16.1.111-115

Keywords:

semiconductor, electrical conduction, electronic structure

Abstract

The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of
V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті  ≈ 9.5·1019–3.6·1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed.

References

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Published

2015-03-15

How to Cite

Romaka V. А., Rogl, P., Stadnyk, Y. V., Romaka, L. P., Korzh, R. O., Kaczorowski, D. ., … Нoryn A. M. (2015). Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics. Physics and Chemistry of Solid State, 16(1), 111–115. https://doi.org/10.15330/pcss.16.1.111-115

Issue

Vol. 16 No. 1 (2015)

Section

Scientific articles
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