Electrical properties of CdTe<Ca> thin layers
DOI:
https://doi.org/10.15330/pcss.20.4.372-375Keywords:
conductivity, concentration, point defects, cadmium tellurideAbstract
The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined.
References
V.P. Makhniy, T.M. Mazur, M.M. Berezovsky, O.V. Kinzerska, V.V. Prokopiv, Physics and Chemistry of Solid State 19(4), 313 (2018) (https://doi.org/10.15330/pcss.19.4.313-315).
E.V. Kuchis, Metody issledovaniya effekta Holla (Sovetskoe radio, Moskva,1974).
N.F. Kovtonyuk, Izmerenie parametrov poluprovodnikovyih materialov (Metallurgiya, Moskva, 1970).
T.M. Razykov, K.M. Kuchkarov, B.A. Ergashev, A.N. Hubbimov, M.K. Khakkulov, Physica 13, 572 (2002).
Y.P. Saliy, I.M. Freik, Physics and Chemistry of Solid State 5(1), 94 (2004).
V.P. Makhniy, Physics and Chemistry of Point Defects in Semiconductors (Chernivtsi National University, Chernivtsi, 2014).
D. Freik, L.Turovska, Chemistry and Chemical Technology 7(4), 375 (2013).
L.V. Turovska, Physics and Chemistry of Solid State 20(2), 190 (2019) (https://doi.org/10.15330/pcss.20.2.190-195).
S.S. Lisniak, Inorganic Materials 29(9), 1913 (1992).
T. Mazur, V. Prokopiv, L. Turovska, Molecular Crystals and Liquid Crystals 671(1), 85 (2018) (https://doi.org/10.1080/15421406.2018.1542088).
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