Study of the structural, electrokinetic and magnetic characteristics of the Er1-xZrxNiSb semiconductor

V.A. Romaka; Yu. Stadnyk; L. Romaka; V. Krayovskyy; A. Нoryn; P. Klyzub; V. Pashkevych

doi:10.15330/pcss.21.4.689-694

Authors

V.A. Romaka National University “Lvivska Politechnika”
Yu. Stadnyk Ivan Franko National University of Lviv
L. Romaka Ivan Franko National University of Lviv
V. Krayovskyy National University “Lvivska Politechnika”
A. Нoryn Ivan Franko National University of Lviv
P. Klyzub Ivan Franko National University of Lviv
V. Pashkevych National University “Lvivska Politechnika”

DOI:

https://doi.org/10.15330/pcss.21.4.689-694

Keywords:

electrical conductivity, thermopower coefficient, Fermi level

Abstract

Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er_1-xZr_xNiSb semiconductive solid solution, х=0–0.10, were studied. It was suggested that when Zr (4d²5s²) atoms were introduced into the structure of the ErNiSb half-Heusler phase by substitution of Er (5d⁰6s²) atoms in 4a position, Zr atoms can also simultaneously occupy the 4c position of Ni (3d⁸4s²) atoms. As a result, in Er_1-xZr_xNiSb semiconductor, the structural defects of donor nature in position 4a and ones of acceptor nature in position 4c were generated simultaneously. In this case, in the band gap of Er_1-xZr_xNiSb, the energy states of impurity donor and acceptor bands (donor-acceptor pairs) appear and determine the electrical conductivity mechanism of the semiconductor.

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