Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element
DOI:
https://doi.org/10.15330/pcss.22.4.729-733Keywords:
resistive sensor, inverter, MOS transistor, subchannel area, signal, amplitudeAbstract
The use of an integrated sensor element as an addition of inverter, which converts the resistance of a sensitive element into the level of the output pulse signal, is investigated. Inverter circuits with different control options for sub-channel areas of MOS transistors are modeled in the LTSpice program. Based on the simulation results, dependencies graphs of the output signal amplitude on the resistance of a sensitive element and sensor’s sensitivity are drawn, and the shapes of the output signals are shown.
References
[1] R. Ghosh, J.W. Gardner, P.K. Guha, IEEE Transactions on Electron Devices 66(8), 3254 (2019) (https://doi.org/10.1109/TED.2019.2924112).
[2] A.S. Fiorillo, C.D. Critello, S.A. Pullano, Sensors and Actuators A: Physical 281, 156 (2018) (https://doi.org/10.1016/j.sna.2018.07.006).
[3] K. Rohrmann, M. Sandner, P. Meier, M. Prochaska, 2018 IEEE International Instrumentation and Measurement Technology Conference: Discovering New Horizons in Instrumentation and Measurement (IEEE, Houston, 2018), p. 1 (https://doi.org/10.1109/I2MTC.2018.8409840).
[4] A. Druzhinin, I. Ostrovskii, Yu. Khoverko, K. Rogacki, I. Kogut, V. Golota, Journal of Materials Science: Materials in Electronics 29(10), 8364 (2018) (https://doi.org/10.1007/s10854-018-8847-0).
[5] J. Li, J.P. Longtin, S. Tankiewicz, A. Gouldstone, S. Sampath, Sensors and Actuators A: Physical 133(1), 1 (2007) (https://doi.org/10.1016/j.sna.2006.04.008).
[6] A. Druzhinin, E. Lavitska, I. Maryamova, V. Voronin, Sensors and Actuators A: Physical 61(1-3), 400 (1997) (https://doi.org/10.1016/S0924-4247(97)80296-8).
[7] I.T. Kogut, A.A. Druzhinin, V.I. Holota, Advanced Materials Research 276, 137 (2011) (https://doi.org/10.4028/www.scientific.net/AMR.276.137).
[8] K. Han, H. Kim, J. Kim, D. You, H. Heo et al., Applied Sciences 10(1), 399 (2020) (https://doi.org/10.3390/app10010399).
[9] S.Y. Yurish, Sensors and Transducers 10, 46 (2011) (https://www.sensorsportal.com/HTML/DIGEST/february_2011/P_SI_132.pdf).
[10] O. López-Lapeña, E. Serrano-Finetti, Oscar Casas, IEEE Transactions on Instrumentation and Measurement 65(1), 222 (2016) (https://doi.org/10.1109/TIM.2015.2479105).
[11] I. Kogut., A. Druzhinin, V. Holota, Y. Khoverko, T. Benko, S. Nichkalo, 2021 IEEE 16th International Conference on the Experience of Designing and Application of CAD Systems, CADSM 2021 (IEEE, Lviv, 2021), p. 15 (https://doi.org/10.1109/CADSM52681.2021.9385245).
[12] K. Elangovan, C. Sreekantan Anoop, IEEE Transactions on Instrumentation and Measurement 69(9), 6070 (2020) (https://doi.org/10.1109/TIM.2020.2972048).
[2] A.S. Fiorillo, C.D. Critello, S.A. Pullano, Sensors and Actuators A: Physical 281, 156 (2018) (https://doi.org/10.1016/j.sna.2018.07.006).
[3] K. Rohrmann, M. Sandner, P. Meier, M. Prochaska, 2018 IEEE International Instrumentation and Measurement Technology Conference: Discovering New Horizons in Instrumentation and Measurement (IEEE, Houston, 2018), p. 1 (https://doi.org/10.1109/I2MTC.2018.8409840).
[4] A. Druzhinin, I. Ostrovskii, Yu. Khoverko, K. Rogacki, I. Kogut, V. Golota, Journal of Materials Science: Materials in Electronics 29(10), 8364 (2018) (https://doi.org/10.1007/s10854-018-8847-0).
[5] J. Li, J.P. Longtin, S. Tankiewicz, A. Gouldstone, S. Sampath, Sensors and Actuators A: Physical 133(1), 1 (2007) (https://doi.org/10.1016/j.sna.2006.04.008).
[6] A. Druzhinin, E. Lavitska, I. Maryamova, V. Voronin, Sensors and Actuators A: Physical 61(1-3), 400 (1997) (https://doi.org/10.1016/S0924-4247(97)80296-8).
[7] I.T. Kogut, A.A. Druzhinin, V.I. Holota, Advanced Materials Research 276, 137 (2011) (https://doi.org/10.4028/www.scientific.net/AMR.276.137).
[8] K. Han, H. Kim, J. Kim, D. You, H. Heo et al., Applied Sciences 10(1), 399 (2020) (https://doi.org/10.3390/app10010399).
[9] S.Y. Yurish, Sensors and Transducers 10, 46 (2011) (https://www.sensorsportal.com/HTML/DIGEST/february_2011/P_SI_132.pdf).
[10] O. López-Lapeña, E. Serrano-Finetti, Oscar Casas, IEEE Transactions on Instrumentation and Measurement 65(1), 222 (2016) (https://doi.org/10.1109/TIM.2015.2479105).
[11] I. Kogut., A. Druzhinin, V. Holota, Y. Khoverko, T. Benko, S. Nichkalo, 2021 IEEE 16th International Conference on the Experience of Designing and Application of CAD Systems, CADSM 2021 (IEEE, Lviv, 2021), p. 15 (https://doi.org/10.1109/CADSM52681.2021.9385245).
[12] K. Elangovan, C. Sreekantan Anoop, IEEE Transactions on Instrumentation and Measurement 69(9), 6070 (2020) (https://doi.org/10.1109/TIM.2020.2972048).
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Published
2021-11-26
How to Cite
Druzhinin, A., Kogut, I., Golota, V., Nichkalo, S., Khoverko, Y. M., & Benko, T. (2021). Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element. Physics and Chemistry of Solid State, 22(4), 729–733. https://doi.org/10.15330/pcss.22.4.729-733
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Scientific articles (Technology)
