Thermal Field Stabilization of the Threshold Voltage of the Field Transistors of the Submicron Technology of the LSI

Authors

  • S.P. Novosyadliy Vasyl Stefanyk Precarpathian National University
  • V.M. Gryga Vasyl Stefanyk Prekarpathian University
  • I.I. Kurysh Vasyl Stefanyk Prekarpathian University
  • M.I. Melnyk Vasyl Stefanyk Prekarpathian University

DOI:

https://doi.org/10.15330/pcss.19.4.352-357

Keywords:

field transistors, submicron technology, LSI

Abstract

On the basis of the analysis of the volume correspondence of the phases in the active gate system Si-SiO2, the possibility of obtaining a negative charge in the shutter system of submicron LSI is shown. Such a technological method has been experimentally verified at low temperature oxidation of silicon, which is patented. Studies have established that the magnitude of charge at the interphase boundary can be significantly influenced by introducing into the oxidizing atmosphere of halogen-containing compounds.

References

S. P. Novosyadlij, Sub-and nanomicron technology for forum structures of the BIS. Monograph (City NB, Ivano-Frankivsk, 2010).

S. P. Novosyadly, AI Terletskyj, Diagnostics of submicron structures of the BIS. Monograph (Simak, Ivano-Frankivsk, 2016).

Ya. S. Budachan, P. I. Melnik, S. P. Novosyadliy, Laboratory-Calculation Workshop on Semiconductor Physics and Solid State Theory (Alpha, Ivano-Frankivsk, 2008).

Patent for Utility Model N27540., "Method for producing n-MOS transistors with negative threshold voltage". Novosyadly S.P., Beretan B. M. has published November 12, 2007

P. Balh-Amsterdam et al., The Si-SiO2 system/EN (Elsevier, 1988).

R. F. De Keermaecker, D. I. Maria, I. Appl Phys. 51(1), 1085 (1980).

L. Krusin-Elbaum, G.A. Lai-Halasa, Appl Phys. Lett 48(2), 177 (1986) (doi:10.1063/1.96935).

A.V. Yemelyanov, Electronic Technology. Ser. 3. Microelectronics 2 (119), 3 (1985).

N.V. Ruman, System silicon-silicon dioxide in PSS transistors, ed. V. M. Koleshko (Science and technology, Minsk, 1986).

N. V. Ruman, V. V. Khatono, V. S. Malyshev, Academy of Sciences of the BSSR. Ser. Physical 3, 20 (1987).

N. A. Avaev, Yu. E. Naumov, Elementy of superlarge integrated circuits (Radio and Svyaz, Moscow, 1986).

S.K. Lee, D.I. Kwong, M.S. Alvi, I. Appl. Phys. 60 (9), 3360 (1986).

Simulation of semi-visual devices and technological processes. Last achievements. Edited by D. Miller trans. English (Radio and Link, Moscow, 1989).

S. P. Novosyadliy, R. I. Zapukhlyak, P. I. Melnik, Physics and Chemistry of Solid State 6(2), 153 (2001).

S. P. Novosyadliy, Bulletin of the Kharkiv University. Series physics. Kernels, particles, circles 1(9), 65 (2000).

S. P. Novosyadlyi, Physics and Chemistry of Solid State 3(1), 175 (2002).

Published

2018-12-25

How to Cite

Novosyadliy, S., Gryga, V., Kurysh, I., & Melnyk , M. (2018). Thermal Field Stabilization of the Threshold Voltage of the Field Transistors of the Submicron Technology of the LSI. Physics and Chemistry of Solid State, 19(4), 352–357. https://doi.org/10.15330/pcss.19.4.352-357

Issue

Section

Scientific articles