Schematic-Topological Modeling of the SOI CMOS Ring Oscillators for Sensor Microsystems on Chip

M.V. Kotyk; V.V. Dovgyi; I.T. Kogut; V.I. Holota

doi:10.15330/pcss.19.4.358-362

Authors

M.V. Kotyk Vasyl Stefanyk Precarpathian National University
V.V. Dovgyi Vasyl Stefanyk Precarpathian National University
I.T. Kogut Vasyl Stefanyk Prekarpathian University
V.I. Holota Vasyl Stefanyk Prekarpathian University

DOI:

https://doi.org/10.15330/pcss.19.4.358-362

Keywords:

silicon-on-insulator, ring generator, sensitive element, sensor microsystem on the chip

Abstract

The paper presents the results of research of frequency and energy characteristics of ring generators on the basis of siliconon-isolator of the CMOS transistor structures, depending on their circuit design and constructive and technological implementation, design and modeling of the schemes of the primary transformation of information from integral sensitive elements for sensor microsystems-on-crystal

References

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I. T. Kogut, V. I. Holota, A. A. Druzhinin, V. V. Dovhij, Journal of Nano Research (Switzerland) 39, 228 (2015).

V. Dovhij, V. Holota, I. Kogut, Architecture development and elements simulation of analytical microsystemon-chip with "silicon-on-insulator" structures. Proceedings of the 13th International Conference “TCSET’2016” (Lviv-Slavske, 2016). 368.

A. Druzhinin, Y. Khoverko, V. Dovhij, I. Kogut, V. Holota, Electrical and layouts simulation of analytical microsystem-on-chip elements for high frequence and low temperature applications. UkrMiCo’2016 (Kyiv, 2016). P. 29.

Web-source: http://www.microwind.org.