Peculiarities of Morphology Formation of Silicon Surface under the Action of Laser Pulses

Authors

  • O.Yu. Bonchyk Pidstryhach Institute for Applied Problems of Mechanics and Mathematics
  • S.G. Kiyak Pidstryhach Institute for Applied Problems of Mechanics and Mathematics
  • I.A. Mohylyak Pidstryhach Institute for Applied Problems of Mechanics and Mathematics
  • D.I. Popovych Pidstryhach Institute for Applied Problems of Mechanics and Mathematics

DOI:

https://doi.org/10.15330/pcss.18.3.309-312

Keywords:

electron-hole plasma, recrystalized area, periodic structures

Abstract

The experimental studies of geometry features of silicon layers in areas of second and millisecond laser pulses were carried out. The results of microscopic studies of periodic structures that are formed on the surfaces with crystallographic orientation (111) (110) (100) and on planes, cut at an angle of 6° to the plane (100) and amorphous layers В2О3 deposited on the surface of silicon were presented. The results can be used to determine the crystallographic orientation of the semiconductor surface and express assessment of disorientation degree of crystal surface.

References

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Published

2017-09-15

How to Cite

Bonchyk, O., Kiyak, S., Mohylyak, I., & Popovych, D. (2017). Peculiarities of Morphology Formation of Silicon Surface under the Action of Laser Pulses. Physics and Chemistry of Solid State, 18(3), 309–312. https://doi.org/10.15330/pcss.18.3.309-312

Issue

Vol. 18 No. 3 (2017)

Section

Scientific articles
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