Особливості схемотопологічного проектування і моделювання топології операційного підсилювача на КМОН-структурах для біомедичних застосувань

I.T. Kogut; B.S. Dzundza; V.I. Holota; V.M. Hryha; M.V. Shtun; A.V. Morgun; V.M. Pivnenko

doi:10.15330/pcss.25.3.553-559

Authors

I.T. Kogut Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
B.S. Dzundza Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
V.I. Holota Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
V.M. Hryha Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
M.V. Shtun Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
A.V. Morgun Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
V.M. Pivnenko Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.25.3.553-559

Keywords:

sensor microsystem, integrated signal converter, photosensitive element, circuit desigm, crystal structure, rare earth elements, chalcogenides, X-ray powder method, EDAX analysis, operational amplifier, СMOS-structures

Abstract

The paper presents the results of circuit topological design and layout simulation of the operational amplifier based on complementary (CMOS) structures using the standard industrial planar CMOS technology on KDB-40 silicon wafers with n-type conductivity wells. The operational amplifier was developed for the implementation of an integral converter signals (ICS) of photoplethysmography, the feature of which is the amplitude regulation and filtering of the constant component in the amplified signal from the diode photosensitive element in the wave range of 400 ÷ 1040 nm. The developed ICS is suitable for creating real devices in an integrated implementation, as an element of sensor microsystems-on-a-crystal or smart sensors.

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