Specific Features of Photoconductivity of Tl1-xIn1-xSnxSe2 Monocrystals at Low Temperatures

O.V. Novosad; G.L. Myronchuk; S.P. Danylchuk; O.V. Zamurueva; L.V. Piskach; I.V. Kityk; M.V. Piasecki; O.V. Tsisar

doi:10.15330/pcss.20.1.55

Authors

O.V. Novosad Lesya Ukrainka Eastern European National University
G.L. Myronchuk Lesya Ukrainka Eastern European National University
S.P. Danylchuk Lesya Ukrainka Eastern European National University
O.V. Zamurueva Lesya Ukrainka Eastern European National University
L.V. Piskach Lesya Ukrainka Eastern European National University
I.V. Kityk Czestochowa University of Technology; Lesya Ukrainka Eastern European National University
M.V. Piasecki J. Dlugosz University; Lesya Ukrainka Eastern European National University
O.V. Tsisar Lesya Ukrainka Eastern European National University

DOI:

https://doi.org/10.15330/pcss.20.1.55

Keywords:

single crystals, defects, photoconductivity, thermally stimulated conductivity

Abstract

The photoconductivity spectra in the temperature range T≈36-200 K and the spectra of thermostimulated currents in the temperature range T≈70-300 K of Tl_1-xIn_1-xSn_xSe₂ single crystals obtained by directional crystallization of Bridgman-Stockbarger have been studied. The induced photoconductivity and long-term photoconductivity relaxation processes have been found. To interpret the found results, a model of two-center recombination has been suggested. It is illustrated that the role of the r-centers of slow recombination are formed by Tl vacancies. On the basis of the studies of the spectra of thermally stimulated currents, the thermal energy of electrons activation with t-levels of adhesion has been determined.

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