Chemical Polishig of CdTe and Solid Solution ZnxCd1-xTe and Cd0.2Hg0.8Te by the HNO3 – НІ – Glycerin Acid Aqueous Solutions

E.E. Hvozdiyevskyi; R.O. Denysyuk; V.M. Tomashyk; Z.F. Tomashyk

doi:10.15330/pcss.18.1.117-121

Authors

E.E. Hvozdiyevskyi Ivan Franko Zhytomyr State University
R.O. Denysyuk Ivan Franko Zhytomyr State University
V.M. Tomashyk V.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine
Z.F. Tomashyk V.Ye. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine

DOI:

https://doi.org/10.15330/pcss.18.1.117-121

Keywords:

semiconductor, solid solutions, single crystal, etchant, surface, chemical etching, polishing

Abstract

The chemical dissolution of the CdTe, Zn_xCd_1-xTe and Cd_0,2Hg_0,8 solid solutions single crystals in the HNO₃ – HI – glycerin aqueous solutions has been investigated. The etching rate dependences of the mentioned above materials versus the iodine and organic content in the compositions and the kinetic peculiarities of the chemical dissolution have been determined. It was established that the dissolution rate of the semiconductor solid solutions in the HNO₃ – HI – glycerin etchant compositions decreases with the increasing of oxidizer and glycerin. Using experimental data, the compositions of polishing solutions and the conditions of chemical-dynamic polishing of the CdTe, Zn_xCd_1-xTe and Cd_0,2Hg_0,8Te surfaces have been optimized.

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