Electrophysical Properties of Indium Doped As2(S, Se)3 thin Films

I.V. Grytsyshche; M.I. Kozak; I.I. Chichura; A.M. Solomon; V.M. Krasilinets; V.Yu.  Loya

doi:10.15330/pcss.17.4.511-514

Authors

I.V. Grytsyshche Institute of Electron Physics, Ukr. Nat. Acad. Sci
M.I. Kozak Uzhhorod National University
I.I. Chichura Uzhhorod National University
A.M. Solomon Institute of Electron Physics, Ukr. Nat. Acad. Sci
V.M. Krasilinets Institute of Electron Physics, Ukr. Nat. Acad. Sci
V.Yu. Loya Institute of Electron Physics, Ukr. Nat. Acad. Sci

DOI:

https://doi.org/10.15330/pcss.17.4.511-514

Keywords:

chalcogenide glasses, energy activation, modification, thin films

Abstract

The electrical studies of In-doped thin films based glassy As₂S₃ and As₂Se₃, determined the energy of activation, the analysis of photovoltaic memory samples.

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