Influence of laser radiation on optical properties of high resistivity crystals CdTe and solid solutions Cd1-xZnxTe

P. O. Gentsar; S. M. Levytskyi

doi:10.15330/pcss.21.1.68-72

Authors

P. O. Gentsar V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
S. M. Levytskyi V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

DOI:

https://doi.org/10.15330/pcss.21.1.68-72

Keywords:

CdTe, CdZnTe, transmission, reflection, absorption, laser irradiation

Abstract

In this paper, the transmission and reflection spectra of single crystals р-CdTe(111) are measured; solid solutions of Cd_1-хZn_хTe (х=0.1) in the range (0.2 – 1.7)·10^-6 m before and after laser irradiation at the wavelength λ = 532 nm in the energy range 66 - 164 mJ/cm² for CdTe(111) and in the energy range 46.6 mJ/cm² - 163.5 mJ/cm² for Cd_1-хZn_xTe (x = 0.1). It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points.

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