Low-temperature deposition of Cd1-xZnxTe layers by laser sputtering and their physical  properties

Yu.S. Gromovyi; L.V. Rashkovetskyi; S.V. Plyatsko

doi:10.15330/pcss.23.1.154-158

Authors

Yu.S. Gromovyi V.E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine
L.V. Rashkovetskyi V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine
S.V. Plyatsko V.E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine

DOI:

https://doi.org/10.15330/pcss.23.1.154-158

Keywords:

passivating coatings, cadmium telluride, thin films, laser epitaxy, low temperature photoluminescence

Abstract

CdZnTe films were grown by the method of modulated infrared laser deposition at a substrate temperature Tsub ≤ 120⁰C from appropriate sources on oriented single-crystal substrates Si, GaAs, InSb in the same technological conditions in one technological cycle. Surface morphology and spectra of low-temperature photoluminescence (T = 4.2K) in the energy range from 1.30 to 1.70 eV were studied. Luminescence spectra were analyzed and presented from three different energy regions: from 1.70 eV to 1.60 eV with exciton emission, from 1.60 eV to 1.55 eV by donor-acceptor transitions (DAP) and region A-centers from 1, 55 to 1.40 eV. The presence in the low-temperature photoluminescence spectra of free exciton bands, excitons on the neutral acceptor and neutral donor, and their phonon replicas on CdZnTe/InSb films testifies to the high structural perfection inherent in materials of detector quality with composition corresponding of the CdZnTe-target.

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