Features Potential Measurements in Submicron High Integral Circuits Structures Using Electro-Optical Effect in Liquid Crystals

S.P. Novosyadlyj; R.V. Ivasuyk; M.W. Kotyk

doi:10.15330/pcss.18.3.376-381

Authors

S.P. Novosyadlyj Vasyl Stefanyk Precarpathian National University
R.V. Ivasuyk Vasyl Stefanyk Prekarpathian University
M.W. Kotyk Vasyl Stefanyk Prekarpathian University

DOI:

https://doi.org/10.15330/pcss.18.3.376-381

Keywords:

liquid crystals, highly integrated circuit, automated design system, nematic liquid crystals, twisteffect

Abstract

The quantitative values of electric potentials in the elements of submicron structures High Integral Circuits in the operating mode can be experimentally determined using electro-optic effect in nematics liquid crystal. This method relates to methods of diagnosing electronic structures of High Integral Circuits using Technical System and relates to the technology of Automated Design System and High Integral Circuits.

References

S.P. Novosyadlyj, AI Terletsky, Diagnosis of submicron structures WSI (Ivano-Frankivsk, 2016).

S.P. Novosyadlyj, East European Journal of advanced technologies 7, 26 (2009).

Patent N68204 (USA). Method of formation of heat resistance of multilayer metallization of submicron structures. Inventor: S.P Novosyadlyi, R.B. Atamanyuk, V.M. Vivcharyk Proprietor : Vasyl Stefanyk Precarpathian National University, 57 Shevchenko Str., 76018 Ivano-Frankivsk.

N.P. Hrytsenko, LCD elektronnaya promyshlynot 95 (1992).

G. Aszodat, J / Isabon, J Janosy 12, 1127 (1981).