Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit
DOI:
https://doi.org/10.15330/pcss.19.2.186-190Keywords:
gallium arsenide, Schottky field transistors, tungsten nitride, tungsten silicide, monocrystallinesiliconAbstract
The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of tungsten, are considered in the paper. A highly effective technology for theformation of capsular layers of AlN and BN nitride films by high-frequency magnetron sputtering of the propertarget in nitric plasma for the realization of GaAs-based MOS-transistors is developed.
References
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[2] S.P. Novosjadlyj, Fizyko-tekhnolohichni osnovy submikronnoi tekhnologii VIS (Simyk, Ivano-Frankivs’k, 2003).
[3] S.P. Novosjadlyj, А.І. Теrlets’kyj, О.B. Fryk, Skhidno-Evropejs’kyj zhurnal peredovykh tekhnologij 3/7(45), 52 (2010).
[4] S.P. Novosjadlyj, Sub- і nanomikronna tekhnologija structur VІS. Monоgrafija (Міsto NV, Ivano-Frankivs’k, 2010).
[2] S.P. Novosjadlyj, Fizyko-tekhnolohichni osnovy submikronnoi tekhnologii VIS (Simyk, Ivano-Frankivs’k, 2003).
[3] S.P. Novosjadlyj, А.І. Теrlets’kyj, О.B. Fryk, Skhidno-Evropejs’kyj zhurnal peredovykh tekhnologij 3/7(45), 52 (2010).
[4] S.P. Novosjadlyj, Sub- і nanomikronna tekhnologija structur VІS. Monоgrafija (Міsto NV, Ivano-Frankivs’k, 2010).
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Published
2019-05-03
How to Cite
Novosiadlyi, S., Mandzyuk, V., Humeniuk, N., & Huk І. (2019). Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit. Physics and Chemistry of Solid State, 19(2), 186–190. https://doi.org/10.15330/pcss.19.2.186-190
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Section
Review
