The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering

A.I. Ievtushenko; L.O. Klochkov; O.S. Lytvyn; V.M. Tkach; O.M. Kutsay; S.P. Starik; V.A. Baturin; A.Y. Karpenko; M.G. Dusheyko; G.V. Lashkarev; O.I. Bykov

doi:10.15330/pcss.16.4.667-674

Authors

A.I. Ievtushenko I.М. Frantsevich Institute for Problems of Material Science, NASU
L.O. Klochkov I.М. Frantsevich Institute for Problems of Material Science, NASU
O.S. Lytvyn V. Lashkarev Institute of Semiconductor Physic, NASU
V.M. Tkach V.Bakul Institute for Superhard Materials, NASU
O.M. Kutsay V.Bakul Institute for SuperhardMaterials, NASU
S.P. Starik V. Lashkarev Institute of Semiconductor Physic, NASU
V.A. Baturin Institute of Applied Physics, NASU
A.Y. Karpenko Institute of Applied Physics, NASU
M.G. Dusheyko National Technical University of Ukraine “KPI"
G.V. Lashkarev I.М. Frantsevich Institute for Problems of Material Science, NASU
O.I. Bykov I.М. Frantsevich Institute for Problems of Material Science, NASU

DOI:

https://doi.org/10.15330/pcss.16.4.667-674

Keywords:

ZnO film, aluminum doping, magnetron deposition, optical transmittance, electrical resistance

Abstract

The influence of oxygen pressure in the deposition chamber on the structure, morphology, optical and electrical properties of aluminum doped ZnO films deposited by a layer by layer growth method in magnetron sputtering on glass substrates was studied. The effect of the application of the traditional one-step approach and our proposed layer by layer growth method in magnetron sputtering on the properties of doped by aluminum ZnO films was analyzed. It is found that with decreasing oxygen pressure in the deposition chamber improves the structure, increases transmittance in the visible spectrum of radiation and decreases resistivity of ZnO:Al films. It is shown that the application of layer by layer growth method in magnetron sputtering allows to grow the transparent conductive ZnO:Al films with higher performance parameters, compared with the films which condensed by traditional approach in magnetron sputtering. The layer by layer growth method allows to grown ZnO:Al films with electrical resistance at 6.1·10^-4 Ohm·cm and transmission in the visible light of 95%, which is promising for their aplication in photovoltaic devices.

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