Transport Phenomena in thin Films of SnTe Doped Stibium
DOI:
https://doi.org/10.15330/pcss.16.3.496-500Keywords:
tin telluride, scattering mechanisms, mobility, surface, nanostructureAbstract
The influence of the thickness of thin films based on compounds SnTe: Sb, deposited on Sital substrates at their structure and mechanisms of carrier scattering are researched. The dominant role of scattering on the surface due to the increasing size of nanocrystals with increasing of thickness vapor-phase structures are defined.
References
V.M. Shperun, D.M. Freik, R.І. Zapuhljak, Termoelektrika teluridu svincju ta jogo analogіv (Plaj, Іvano-Frankіvs'k, 2000).
D.M. Freik, M.A. Galushhak, L.J. Mezhilovskaja, Fizika i tehnologija tonkih plenok (Vishha shkola, L'vov, 1988).
Ju.V. Klanіchka, B.S. Dzundza, L.J. Mezhilovs'ka, Ja.S. Javors'kij, Physics and Chemistry of Solid State 12, 346 (2011).
Poverhnostnye svojstva tverdyh tel. Pod. red. M. Grina (Mir, Moskva, 1972).
P.R. Vaya, J. Majht, B.S.V. Gopalam, C. Dattatrepan, Phys. Stat. Sol. (a), 87(341), 341 (1985).
D.M. Freїk, І.І. Chav’jak, B.S. Dzundza, O.B. Kostjuk, Physics and Chemistry of Solid State 13(1), 73 (2012).
C.R. Tellier, A.J. Tosser, C. Boutrit, Thin Solid Films 44, 201 (1977).