Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS

Authors

  • S.P. Novosyadlyi Vasyl Stefanyk Precarpathian National University
  • V.S. Huzik Vasyl Stefanyk Prekarpathian University

DOI:

https://doi.org/10.15330/pcss.16.3.599-605

Keywords:

super beta-transistor, heterostructure, gallium arsenide, silicon, reactors electron-cyclotron resonance

Abstract

Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).

References

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U. Tіll, Integral'nie shemi. Materialy, pribory, izgotovlenie. Per s ang, pod..red. M.V. Gal'nezna (Mir, Moskva, 1981).

S.P. Novosjadlij, V.M. Berezhans'kij, Shіdno-Evropejs'kij zhurnal peredovih tehnologіj 1(25), 40 (2007).

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Published

2015-09-15

How to Cite

Novosyadlyi, S., & Huzik, V. (2015). Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS. Physics and Chemistry of Solid State, 16(3), 599–605. https://doi.org/10.15330/pcss.16.3.599-605

Issue

Vol. 16 No. 3 (2015)

Section

Scientific articles
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