Influence of Laser Radiation on Optical Properties of Semiconductor Materials
DOI:
https://doi.org/10.15330/pcss.20.4.384-390Keywords:
transmission, reflection, absorption, laser irradiation, n-Si(100), n-GaAs(100), Ge1-хSiхAbstract
In this paper, the transmission and reflection spectra of n-Si(100) single crystals are measured; n-GaAs(100); solid solutions of Ge1-хSiх (х = 0.85) in the range (0.2 - 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm. It is established that the main mechanism of influence of pulsed laser irradiation on the optical properties of thin surface layers of the investigated crystals is structural gettering, that is, the absorption due to the presence of sections of semiconductors that have a defective structure and have the ability to actively absorb defects and points.
References
V.A. Zuev, V.G. Litovchenko, V.G. Popov, Quantum Electronics 23, 33 (1982).
V.P. Veiko, MN Libenson, G.G. Chervyakov, EB Yakovlev, Interaction of laser radiation with matter (Fizmatlit, Moscow, 2008).
W. Julie, Laser Technology and Materials Analysis (Mir, Moscow, 1986).
P.O. Genzar, O.I. Vlasenko, S.M. Levitskyi, V.A. Gnatyuk, Physics and Chemistry of Solid State 15(4), 856 (2014).
P.O. Genzar, S.M. Levitskyi, Chemistry, Physics and Technology of the Surface 7(2), 186 (2016).
P.O. Genzar, O.I. Vlasenko, S.M. Levitskyi, UJP, 62 (11), 947 (2017).
P.O. Genzar, O.I. Vlasenko, S.M. Levitskyi, I.B. Yanchuk, S.R. Lavorik, Physics and Chemistry of Solid State 15(2), 303 (2014).
F. Bechstedt, R. Enderline, Surfaces and Boundaries of the Semiconductor Division (Mir, Moscow, 1990).
Problems of surface physics of semiconductors (Naukova Dumka, Kyiv, 1981).
V.E. Primachenko, O.V. Snitko, Physics of a metal-doped semiconductor surface (Naukova Dumka, Kyiv, 1988).
