Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI

Authors

  • S. P. Novosyadliy Vasyl Stefanyk Precarpathian National University
  • V. M. Lukovkin Vasyl Stefanyk Precarpathian National University
  • R. Melnyk Vasyl Stefanyk Precarpathian National University
  • A. V. Pavlyshyn Vasyl Stefanyk Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.21.2.361-364

Keywords:

electronics, LSI, Schottky FET, modeling, GaAs

Abstract

In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in channel and its characteristics. Based on conducted modeling discovered new effect in MESFET, shielding of volumetric charge, which sufficiently influences on current distribution in channel.

References

T. Mizutani, Photo-Induced Current Spectroscopy for Normally-Off GaAs MESFETs (Japanese Journal of Applied Physics, 1982)

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M. Shur, Modern devices based on GaAs (Mir, Moscow, 1991)

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M. J. Sikder, P. Valizadeh, Solid-State Electronics 89, 105–110 (2013).

V. A. Moskalyuk, D. I. Timofeev, A. V. Fedyaj, Ultrafast electronic devices. Kyiv: NTUU KPI, 480 (2012).

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Published

2020-06-15

How to Cite

Novosyadliy, S. P., Lukovkin, V. M., Melnyk, R., & Pavlyshyn, A. V. (2020). Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI. Physics and Chemistry of Solid State, 21(2), 361–364. https://doi.org/10.15330/pcss.21.2.361-364

Issue

Vol. 21 No. 2 (2020)

Section

Scientific articles
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