Temperature dependence of the optical absorption edge of doped gallium arsenide

Authors

  • Ig. Iv. Chychura National University of Uzhhorod
  • I. I. Turianytsia National University of Uzhhorod
  • Iv. Iv. Chychura Institute of Electron Physics, Ukranian National Academy of Sciences

DOI:

https://doi.org/10.15330/pcss.21.2.288-293

Keywords:

Fiber-optic temperature sensors, Zn doped GaAs crystals, Optical transmission of doped GaAs crystals

Abstract

The temperature dependences of the optical absorption edges of Zn doped GaAs semiconductor crystals have been measured from 300 to 560 K. The temperature dependence of the optical absorption in the Urbach edges is adequately reproduced by a Bose-Einstein model. Analysis of experimental results gave us the opportunity to offer an explicit function of two arguments (photon energy and temperature) for the absorption coefficient of doped crystals in the Urbach edge region.

References

John D. Cressler, H. Alan, Technology & Engineering (Mantooth Extreme Environment Electronics CRC Press, 2017).

Hamad Jappor, European Journal of Scientific Research 59, 264 (2011).

Igor Chychura, Fiber-Optic Temperature Sensors with Chalcogenide Glass and Crystalline Sensing Element (2019) (https://doi.org/10.5772/intechopen.89207).

M. Beaudoin, & A. DeVries, & S.R. Johnson, & H. Laman, & Tom Tiedje, Applied Physics Letters 70, 3540 (1997) (https://doi.org/10.1063/1.119226).

J. Akinlami, & A. Ashamu, Journal of Semiconductors 34, 032002 (2013) (https://doi.org/10.1088/1674-4926/34/3/032002).

C.D. Thurmond, J. Electrochem. Soc. 122, 1133 (1975) (https://doi.org/10.1149/1.2134410).

M.B. Panish and H.C. Casey, J. Appl. Phys. 40, 163 (1969) (https://doi.org/10.1063/1.1657024).

Tauc, Progr. Semiconductors 9, 89 (1965).

M. Beaudoin, Appl. Phys. Lett. 70, 3540 (1997) (https://doi.org/10.1063/1.119226).

Y. Zhao, M. Rong, I. Liao, IEEE Sensors Journal 3(4), 400 (2003).

G.D. Cody, Semiconductors and Semimetals, edited by J. I. Pankove (Academic, 1984).

Katsuhiro Uesugi, Appl. Phys. Lett. 76, 1285 (2000) (https://doi.org/10.1063/1.126010).

Yoshida Junichi et al, Jpn. J. Appl. Phys. 42, 371 (2003) (https://doi.org/10.1143/JJAP.42.371).

Ikuo Suemune, & K. Uesugi, Appl. Phys. Lett. 77, 3021 (2000) (https://doi.org/10.1063/1.1322633).

S.R. Johnson and T. Tiedje, Journal of Applied Physics 78, 5609 (1995) (https://doi.org/10.1063/1.359683).

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Published

2020-06-15

How to Cite

Chychura, I. I., Turianytsia, I. I., & Chychura, I. I. (2020). Temperature dependence of the optical absorption edge of doped gallium arsenide. Physics and Chemistry of Solid State, 21(2), 288–293. https://doi.org/10.15330/pcss.21.2.288-293

Issue

Vol. 21 No. 2 (2020)

Section

Scientific articles
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