Electrical properties of cadmium telluride thin films doped with calcium and lithium

V.V. Prokopiv; B.S. Dzundza; S.V. Sharyn; T.M. Mazur; L.V. Turovska; O.М. Matkivskyi

doi:10.15330/pcss.21.2.232-237

Authors

V.V. Prokopiv Vasyl Stefanyk Precarpathian National University
B.S. Dzundza Vasyl Stefanyk Precarpathian National University
S.V. Sharyn Vasyl Stefanyk Precarpathian National University
T.M. Mazur Vasyl Stefanyk Precarpathian National University
L.V. Turovska Ivano-Frankivsk National Medical University
O.М. Matkivskyi Vasyl Stefanyk Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.21.2.232-237

Keywords:

cadmium telluride, conductivity, concentration, point defects, calcium, lithium

Abstract

The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium or lithium is described.
The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined

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