Synthesis and electrical transport properties of Er1-xScxNiSb  semiconducting solid solution

L. Romaka; Yu. Stadnyk; V.A. Romaka; P. Klyzub; V. Pashkevych; A. Horyn; P. Garanyuk

doi:10.15330/pcss.22.1.146-152

Authors

L. Romaka Ivan Franko L’viv National University
Yu. Stadnyk Ivan Franko L’viv National University
V.A. Romaka Lviv Polytechnic National University
P. Klyzub Ivan Franko L’viv National University
V. Pashkevych Lviv Polytechnic National University
A. Horyn Ivan Franko L’viv National University
P. Garanyuk Lviv Polytechnic National University

DOI:

https://doi.org/10.15330/pcss.22.1.146-152

Keywords:

semiconductor, electrical conductivity, thermopower coefficient, Fermi level, structural defect

Abstract

Samples of Er_1-_xSc_xNiSb (x = 0–0.10) solid solution were synthesized by an arc-melting and the effect of doping by Sc atoms on the electrokinetic and energetic characteristics of the half-Heusler ErNiSb phase was investigated. It was established that at the studied concentrations the main carriers of electricity in the Er_1-xSc_xNiSb semiconductor are holes. It was shown that doping of p-ErNiSb compound by Sc atoms introduced by substitution of Er atoms in 4a position is accompanied by the occupation of presented vacancies in position 4a, which leads to the reduction and elimination of structural defects of acceptor nature and corresponding acceptor band. The concentration ratio of ionized acceptors and donors generated in Er_1-xSc_xNiSb determines the position of the Fermi level and the mechanisms of electrical conduction. The investigated solid solution Er_1-xSc_xNiSb is a promising thermoelectric material.

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