Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals
DOI:
https://doi.org/10.15330/pcss.20.2.144-148Keywords:
Cd1-xMnxTe,, solid solutions, electrical properties, Hall effect, GermaniumAbstract
Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2 /(V´s).
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