Structure and Optical Properties of CdTe and CdS Thin Films after Hard Ultraviolet Irradiation

G.I. Kopach; A.I. Dobrozhan; G.S. Khrypunov; R.P. Mygushchenko; О.Y. Kropachek; R.V. Zaitsev; A.V. Meriuts

doi:10.15330/pcss.20.2.165-170

Authors

G.I. Kopach National Technical University «Kharkіv Polytechnic Institute»,
A.I. Dobrozhan National Technical University «Kharkіv Polytechnic Institute»
G.S. Khrypunov National Technical University «Kharkіv Polytechnic Institute»
R.P. Mygushchenko National Technical University «Kharkіv Polytechnic Institute»
О.Y. Kropachek National Technical University «Kharkіv Polytechnic Institute»
R.V. Zaitsev National Technical University «Kharkіv Polytechnic Institute»
A.V. Meriuts National Technical University «Kharkіv Polytechnic Institute»

DOI:

https://doi.org/10.15330/pcss.20.2.165-170

Keywords:

cadmium telluride, cadmium sulfide, non-pulsed direct current magnetron sputtering, hard ultraviolet, thin films

Abstract

The influence of hard ultraviolet radiation on the crystalline structure, surface morphology and optical characteristics of CdS and CdTe semiconductor layers obtained by direct current magnetron sputtering are investigated. It was established that the optical characteristics of the studied films CdS and CdTe are insensitive to hard ultraviolet irradiation. The crystalline structure of the CdS and CdTe layers is changed after irradiation. The period of the lattice for cadmium sulfide films increases from c = 6.77(01) Å to c = 6.78(88) Å, which may be due to the formation of point defects and defective complexes. Decrease the integral FWHM of the peaks on the X-ray diffraction patterns of the layers of CdS and CdTe was observed, due to the increase of the coherent scattering regions as a result in the process of near-surface layers partial recrystallization of the investigated films.

References

A. Bosio, N. Romeo, S. Mazzamuto, V Canevari, Progress in Crystal Growth and Characterization of Materials, 52(4), 247 (2006) (doi: 10.1016/j.pcrysgrow.2006.09.001).

X. Wu, J.C. Keane, R.G. Dhere, C. DeHart, D.S. Albin, A. Duda, T.A. Gessert, S. Asher, D.H. Levi, P. Sheldon, Proceedings of the 17th European Photovoltaic Solar Energy Conference (Dover, 2001). P. 995.

G.S. Khrypunov, G.I. Kopach, R.V. Zaitsev, A.І. Dobrozhan, M.M. Harchenko, Journal of Nano- and Electronic Physics 9(2), 02008 (2017) (doi: 10.21272/jnep.9(2).02008).

D.A. Kudii, М.G. Khrypunov, R.V. Zaitsev, A.L. Khrypunova, Journal of Nano- and Electronic Physics 10(3), 03007 (2018) (doi: 10.21272/jnep.10(3).03007).

A. Polman, M. Knight, E.C. Garnett, B. Ehrler, W.C. Sinke, Science 352, 6283 (2016) (doi:10.1126/science.aad4424).

B.T. Boiko, G.I. Kopach, V.R. Kopach, G.S. Khrypunov, Solar Energy 21(1), 123 (1991).

M.V. Kirichenko, R.V. Zaitsev, A.I. Dobrozhan, G.S. Khrypunov, M.M. Kharchenko, IEEE International Young Scientists Forum on Applied Physics and Engineering (Lviv, 2017), P.108