Electrical Transport Properties of R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) Compounds

I. Romaniv; B. Kuzhel; L. Romaka; V. Pavlyuk

doi:10.15330/pcss.19.4.316-321

Authors

I. Romaniv Ivan Franko National University of Lviv
B. Kuzhel Ivan Franko National University of Lviv
L. Romaka Ivan Franko National University of Lviv
V. Pavlyuk Ivan Franko National University of Lviv

DOI:

https://doi.org/10.15330/pcss.19.4.316-321

Keywords:

intermetallics, electrical resistivity, X-ray phase analysis

Abstract

Electrical transport properties of the R₃Ag₄Sn₄ (R = Gd, Tb, Dy, Ho) intermetallics crystallized in the orthorhombic Gd₃Cu₄Ge₄ structure type (space group Immm) were studied in the temperature interval 11 – 300 K. Measurements of the temperature dependencies of electrical resistivity (r(T)) showed that all the studied compounds are characterized by metallic type of conductivity. The slope change of the resistivity at low temperature part of r(T) dependencies for Gd₃Ag₄Sn₄, Tb₃Ag₄Sn₄ and Dy₃Ag₄Sn₄ compounds is connected with their magnetic ordering. Change of the resistivity caused by magnetic ordering was not observed for the Ho₃Ag₄Sn₄ compound in the studied temperature interval. Relation between magnetic and electric properties of the investigated R₃Ag₄Sn₄ compounds was analyzed.

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