Tuning the Optical, Electronic and Thermal Characteristics of Si3N4/PVA/PEO Solid State Structures for Electronics Devices

Hind  Ahmed; Ahmed Hashim

doi:10.15330/pcss.23.1.67-71

Authors

Hind Ahmed University of Babylon
Ahmed Hashim University of Babylon

DOI:

https://doi.org/10.15330/pcss.23.1.67-71

Keywords:

silicon nitride, energy gap, PEO, electronic properties, devices

Abstract

The present paper deals with design of Si₃N₄ doped PVA/PEO new structures to use in different optic, electronic, photonic and electric approaches with distinguished characteristics included few cost, high corrosion resistance, lightweight and good optical, thermal and electronic properties. The Si₃N₄/PVA/PEO structures were optimized and effectively simulated with a B3LYP / LanL2DZ primer. The structure stability, optical, thermal and electronic properties of Si₃N₄/PVA/PEO were studied. The obtained results indicated to the PVA/PEO/Si₃N₄ structures may be used for various optoelectronics devices with low cost and high flexibly.

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