Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution.  I. Experimental results

V.A. Romaka; Yu. Stadnyk; L. Romaka; А. Horyn; V. Pashkevich; H. Nychyporuk; P. Garanyuk

doi:10.15330/pcss.23.2.235-241

Authors

V.A. Romaka Lviv Politechnic National University, Lviv, Ukraine
Yu. Stadnyk Ivan Franko National University of Lviv, Lviv, Ukraine
L. Romaka Ivan Franko National University of Lviv, Lviv, Ukraine
А. Horyn Ivan Franko National University of Lviv, Lviv, Ukraine
V. Pashkevich Lviv Polytechnic National University, Lviv, Ukraine
H. Nychyporuk Ivan Franko National University of Lviv, Lviv, Ukraine
P. Garanyuk Lviv Polytechnic National University, Lviv, Ukraine

DOI:

https://doi.org/10.15330/pcss.23.2.235-241

Keywords:

semiconductor, electrical conductivity, thermopower coefficient, Fermi level

Abstract

The effect of doping of half-Heusler phase p-LuNiSb (MgAgAs structure type) by Zr atoms on the structural, kinetic, energetic and magnetic characteristics of the semiconductor solid solution Lu_1-_xZr_xNiSb was studied in the ranges: T = 80–400 K, x = 0–0.10. From experimental studies it has been established that doping of p-LuNiSb compound with Zr atoms simultaneously generates both structural defects of acceptor and donor nature, the concentration of which increases with increasing content of Zr atoms. It was shown that the investigated semiconductor solid solution Lu_1-_xZr_xNiSb is a promising thermoelectric material.

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