Peculiarities of Electrical Characteristics of Semi-Insulating CdTe-Сl crystals

Ye.S. Nykoniuk; Z.I. Zakharuk; S.V. Solodin; P.M. Fochuk; S.G. Dremluyzhenko; I.M. Yuriychuk; B.P. Rudyk

doi:10.15330/pcss.18.3.334-337

Authors

Ye.S. Nykoniuk National University of Water Management and Nature Resources Use
Z.I. Zakharuk Yuriy Fedkovych Chernivtsi National University
S.V. Solodin Yuriy Fedkovych Chernivtsi National University
P.M. Fochuk Yuriy Fedkovych Chernivtsi National University
S.G. Dremluyzhenko Yuriy Fedkovych Chernivtsi National University
I.M. Yuriychuk Yuriy Fedkovych Chernivtsi National University
B.P. Rudyk National University of Water Management and Nature Resources Use

DOI:

https://doi.org/10.15330/pcss.18.3.334-337

Keywords:

transport phenomena, scattering of charge carriers, cadmium telluride

Abstract

Electrical properties of semi-insulating CdTe-Сl crystals, grown by the vertical Bridgman and the travelling heater method, have been studied. It is found that the travelling heater method provides electron conductivity of the crystals, and the vertical Bridgman method – hole conductivity. Specific resistance of the samples is of (10⁸-10⁹) Ohm×сm at 300 K, and Hall mobility of the holes and electrons is of (45 - 55) cm²/V·s and (10 - 20) cm²/V·s respectively. Very low values of electron mobility and an exponential temperature dependence of µ_n are due to drift barriers with a height of ε_b ≈ 0.20 eV. Formation of the barriers is caused by the fluctuations of the potential relief resulting from the microheterogeneity of the defect-impurity system. Quasi-photochemical reactions that reduce electron mobility after photo-excitation have been observed in n-CdTe-Cl samples. In p-CdTe-Cl samples, neither drift barriers, nor quasi-photochemical reactions were detected.

References

D.V. Korbutyak, S.V. Melnychuk, Ye.V. Korbut, M.M. Borisyuk, Cadmium Telluride: impurity-defect states and detector properties (Ivan Fedorov, Kyiv, 2000).

K. Zanio, Cadmium Telluride 13, 235 (1978).

L. Zou, Z. Gu, N. Zhang, Y. Zhang, Z. Fang, W. Zhu and Xinhua Zhong, J. of Material Chemistry 18, 2807 (2008).

K. Shcherbin, S. Odoulov, Z. Zakharuk, I. Rarenko, Optical Materials 18, 159 (2001).

K.L. Chopra, P.D. Paulson, V. Dutta, Progress in Photovoltaics: Research and Applications 12, 69 (2004).

M.Fiederle, V.Babentsov, J.Franc, A.Fauler, J.-P.Konrath, Cryst. Res. Technol. 38, 588 (2003).

А. Zaiour, M. Ayoub, A. Hamié. А. Fawaz, M. Hage-ali, Physics Procedia 55, 476 (2014).

S.G. Dremluzhenko, Z.I. Zakharuk, I.M. Rarenko, V.M. Srtebegev, A.G. Voloshchuk, I.M. Yurijchuk Semiconductor Physics, Quantum Electronics & Optoelectronics 7(1), 52, (2004).

A.Ya. Shik, ZhETF 71, 1159 (1976).

P.M. Fochuk, E.S. Nikonyuk, Z.I. Zakharuk, G.I. Rarenko, S.G. Dremlyuzhenko, Scientific Journal of Chernivtsi University, 771:Chemistry 56 (2016).

Cadmium Telluride and related Compounds, Physics, Defects, Hetero- and Nanostructures, Crystal Growth, Surfaces and Applications (Elsevier, Amsterdam-Oxford, 2010).

L.R. Weisberg, J. Appl. Phys. 33, 1817 (1962).