The influence of mercury vapor on the electrical resistance of chalcogenide amorphous films

V.M. Rubish; V.K. Kyrylenko; M.O. Durkot; V.V. Boryk; R.O. Dzumedzey; I.M. Yurkin; M.M. Pop; Yu.M. Myslo

doi:10.15330/pcss.24.2.335-340

Authors

V.M. Rubish Institute for Information Recording, NAS of Ukraine, Uzhgorod, Ukraine
V.K. Kyrylenko Institute for Information Recording, NAS of Ukraine, Uzhgorod, Ukraine
M.O. Durkot Institute for Information Recording, NAS of Ukraine, Uzhgorod, Ukraine''
V.V. Boryk Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
R.O. Dzumedzey Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
I.M. Yurkin Uzhgorod National University, Uzhgorod, Ukraine
M.M. Pop Institute for Information Recording, NAS of Ukraine, Uzhgorod, Ukraine; Uzhgorod National University, Uzhgorod, Ukraine
Yu.M. Myslo Uzhhorod National University, Uzhhorod, Ukraine

DOI:

https://doi.org/10.15330/pcss.24.2.335-340

Keywords:

chalcogenide amorphous films, electrical resistance, mercury film modification, mercury selenide, mercury vapor sensors

Abstract

Using the planar structures "Ni layer - chalcogenide amorphous film - Ni layer" and "graphite probe - chalcogenide amorphous film graphite probe" samples, the influence of mercury vapor on the electrical resistance of amorphous films of the Se-Te, Se-Sb and Se-As systems was investigated. It was established that exposure of samples in mercury vapor leads to a decrease in their electrical resistance by 4-7 orders of magnitude. As the temperature and mercury concentration increase, the transition time from a high-resistance state to a low-resistance state decreases. When introducing Te, Sb, and As into amorphous selenium and increasing their concentration in the composition of the films, the transition time increases, and the value of the change in resistance decreases. It was established that the change in resistance is mainly determined by the change in surface conductivity of chalcogenide films. A decrease in the electrical resistance of selenium-containing amorphous films modified with mercury is caused by the formation of HgSe crystalline inclusions in their matrix.

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