The influence of heavy doping of TiCoSb intermetallic semiconductor with Cr atoms on structural,  kinetic and energetic properties

Yu. Stadnyk; L. Romaka; V.A. Romaka; A. Horyn; V.V. Romaka; T. Lukovskyy; O. Poplavskyi

doi:10.15330/pcss.25.2.391-398

Authors

Yu. Stadnyk Ivan Franko National University of Lviv, Lviv, Ukraine
L. Romaka Ivan Franko National University of Lviv, Lviv, Ukraine
V.A. Romaka Lviv Polytechnic National University, Lviv, Ukraine
A. Horyn Ivan Franko National University of Lviv, Lviv, Ukraine
V.V. Romaka Leibniz Institute for Solid State and Materials Research, IFW-Dresden, Dresden, Germany
T. Lukovskyy Lviv Polytechnic National University, Lviv, Ukraine
O. Poplavskyi Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.25.2.391-398

Keywords:

semiconductor, electrical conductivity, thermopower coefficient, Fermi level

Abstract

The structural, electrokinetic, and energetic properties of the TiСо_1-xCr_xSb semiconductor obtained by doping TiCoSb with Cr atoms introduced into the structure by substituting Co atoms in the crystallographic position 4c were studied. It was shown that in TiСо_1-xCr_xSb the structural defects of donor and acceptor nature are generated simultaneously in different ratios depending on the impurity concentration. At concentrations of х ≥ 0.02, the conductivity of TiСо_1-xCr_xSb has a metallic character, and the contribution of current carrier scattering mechanisms to the value of electrical resistivity is of the same order as changes in the concentration of current carriers. It was established that at all temperatures in the range of concentrations x = 0–0.02, the rate of generation of donors exceeds the rate of generation of acceptors, and at concentrations x > 0.02, on the contrary, the rate of generation of acceptors is greater than that of donors. This is indicated by the positive values of thermopower coefficient α(х,Т) of TiСо_1-xCr_xSb for х > 0.03.

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