Hardness, VSM, cyclic voltammetric and DFT studies of Cesium Sulphate-doped TGS crystals

S. Jerin Blessy; H. Johnson Jeyakumar; S. Gracelin Juliana; P. Selvarajan; A. Antony Muthu Prabhu

doi:10.15330/pcss.25.3.560-569

Authors

S. Jerin Blessy Research scholar, Reg.No.21212152132003, PG and Research Department of Physics,Pope’s College, Affiliated to Manonmaniam Sundranar University, Tirunelveli, Tamilnadu, India
H. Johnson Jeyakumar PG and Research Department of Physics, Pope’s College, Affiliated to Manonmaniam Sundaranar University, Tirunelveli, Tamilnadu, India
S. Gracelin Juliana Department of Physics, Nazareth Margoschis College, Nazareth, Tamilnadu, India
P. Selvarajan Department of Physics, Aditanar College of Arts and Science, Tiruchendur, Tamilnadu, India
A. Antony Muthu Prabhu Department of PG Chemistry, Aditanar College of Arts and Science, Tiruchendur, Tamilnadu, India

DOI:

https://doi.org/10.15330/pcss.25.3.560-569

Keywords:

TGS, doping, solution growth technique, ferroelectric, FTIR, XRD, hardness, DFT, VSM, cyclic voltammetry

Abstract

The creation of capacitors, transducers, sensors, and infrared detectors utilise the nonlinear, ferroelectric triglycine sulphate (TGS) crystal. Cesium sulphate is incorporated into the lattice of TGS crystal to change its characteristics. Cesium sulfate-doped triglycine sulphate (CSTGS) single crystals were produced using a solution approach and a slow evaporation process. The title crystal was studied by single crystal XRD, FTIR, hardness, VSM, cyclic voltammetric and density functional theoretical (DFT) studies and the results are discussed in this paper.

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