Synthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cells

Yana Suchikova; Serhii Kovachov; Ihor Bohdanov; Dariya Drozhcha; Ivan Kosogov; Zhakyp T. Karipbayev; Anatoli I. Popov

doi:10.15330/pcss.25.3.546-552

Authors

Yana Suchikova Berdyansk State Pedagogical University, Berdyansk, Ukraine
Serhii Kovachov Berdyansk State Pedagogical University, Berdyansk, Ukraine
Ihor Bohdanov Berdyansk State Pedagogical University, Berdyansk, Ukraine
Dariya Drozhcha Berdyansk State Pedagogical University, Berdyansk, Ukraine
Ivan Kosogov Berdyansk State Pedagogical University, Berdyansk, Ukraine
Zhakyp T. Karipbayev Faculty of Physics and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana, Kazakhstan
Anatoli I. Popov Institute of Solid State Physics, University of Latvia, Riga, Latvia

DOI:

https://doi.org/10.15330/pcss.25.3.546-552

Keywords:

β-Ga2O3, por-GaAs, mono-GaAs, heterostructure, solar cells, electrochemical etching, oxygen annealing, XRD, SEM, Raman spectroscopy

Abstract

This study comprehensively details the successful synthesis of a β-Ga₂O₃/por-GaAs/mono-GaAs heterostructure designed for portable solar cells. Employing a combination of electrochemical etching and high-temperature oxygen annealing, we engineered a heterostructure that exhibits both crystalline and amorphous phases. XRD, SEM, and Raman spectroscopy analyses confirmed the formation of crystalline β-Ga₂O₃ and GaAs, with the porosity in the GaAs layer enhancing light absorption and charge collection. The potential of the heterostructure to improve photovoltaic performance is attributed to the inherent stability of Ga₂O₃ and the increased surface area provided by the porous GaAs.

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