GaN based light emitters

M.M. Slyotov; O.M. Slyotov; H.V. Potsіluiko-Hryhoriak; M.P. Mazur; Т.М. Mazur

doi:10.15330/pcss.25.2.297-302

Authors

M.M. Slyotov Yuri Fedkovich Сhernivtsi National University, Chernivtsi, Ukraine
O.M. Slyotov Yuri Fedjkovych Chernivtsy National University, Chernivtsy, Ukraine
H.V. Potsіluiko-Hryhoriak Chernivtsi Industrial Professional College, Chernivtsi, Ukraine
M.P. Mazur Ivano-Frankivsk National Technical University of Oil and Gas Ivano-Frankivsk, Ukraine
Т.М. Mazur Ivano Frankivsk National Technical University of Oil and Gas, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.25.2.297-302

Keywords:

gallium nitride, layers and crystals, optical properties, mechanisms of radiative recombination

Abstract

The article discusses the preparation of epitaxial layers and GaN crystals, as well as the results of studies of their optical and luminescent properties. The parameters of the band structure of the resulting hexagonal modification materials Δ_CR≈ 10 meV and Δ_SO≈ 48 meV were determined. The mechanisms of the main recombination processes that determine the formation of radiation from undoped and Zn-doped materials have been established. The role of interband recombination and annihilation of excitons in the formation of radiation in the high-energy region and transitions of carriers through energy states that are formed and created by intrinsic point defects of the crystal lattice and dopant has been established. The role of response recombination processes in the formation of short-wave radiation spectra is analyzed.

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