Features Multilevel Metallization Forming a Submicron Structures of Large Integrated Circuits

S.P. Novosyadlyj; S.I. Boyko; M.V. Kotyk

doi:10.15330/pcss.17.4.630-636

Authors

S.P. Novosyadlyj Vasyl Stefanyk Precarpathian National University
S.I. Boyko Vasyl Stefanyk Prekarpathian University
M.V. Kotyk

DOI:

https://doi.org/10.15330/pcss.17.4.630-636

Keywords:

metallization, magnetron sputtering, thin film

Abstract

This paper analyzesaluminum alloys that are used to form multilevel metallization in the submicron LSI/VLSI and magnetic alloys that are used for the production of magnetic disks of external storage devices with a large amount of memory. In addition characteristics of magnetron sputtering devices that can be used to form thinmetallization are given: magnetron sputtering device with a magnetic block rotated by cooling deionized water, which can significantly increase the effectiveness of sputtering; high-frequency magnetron device UMV 2,5 with magnetic system that formed on electromagnets with scanning magnetic field; magnetron sputtering device UVN MDE.P-1250-012 which can be used to form double-sided metallization; magnetron sputtering device based on URM.3.279.05 which can be used to form multilayer contact metallization.

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