Electric and photoelectric properties of solid solutions Ag2In2Si(Ge)Se6
DOI:
https://doi.org/10.15330/pcss.17.2.202-206Keywords:
conductivity, activation energy, an amorphous semiconductor, photoconductivityAbstract
Temperature depen-dences of specific dark conductivity and spectral distributions ofphotoconductivity have been studied. It has been established thatthe Ag2In2SiSe6and Ag2In2GeSe6single crystals are high-resistancesemiconductors withp-type conductivity. The interpretation of experimental results conducted under the Mott model for disordered systems. Thus, from the experimental results follows that the solid solution AgInSe2 - Si(Ge)Se2 when the temperature drops from 300 to 200 K, the conductivity in the area carried thermo excited permitted carriers impurity activation energy of ~ 0.59eV and 0.48eV for Ag2In2SiSe6 and Ag2In2GeSe6 respectively.
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Published
2016-06-15
How to Cite
Zamuruieva, O., Khvyshchu, M., Parasyuk, O., & Myronchuk, G. (2016). Electric and photoelectric properties of solid solutions Ag2In2Si(Ge)Se6. Physics and Chemistry of Solid State, 17(2), 202–206. https://doi.org/10.15330/pcss.17.2.202-206
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