Low-Impedance Investigations of Hydrogenated GaSe Layered Crystals

Authors

  • V.M. Kaminskii I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine
  • V. V. Netyaga Institute of Problems of Materials Science. I.M. Frantsevich of the National Academy of Sciences of Ukraine
  • Z. D. Kovalyuk Institute of Problems of Materials Science. I.M. Frantsevich of the National Academy of Sciences of Ukraine
  • V. B. Boledzyuk Institute of Problems of Materials Science. I.M. Frantsevich of the National Academy of Sciences of Ukraine
  • V. I. Ivanov Institute of Problems of Materials Science. I.M. Frantsevich of the National Academy of Sciences of Ukraine
  • T. I. Bratanich Institute of Problems of Materials Science. I.M. Frantsevich of the National Academy of Sciences of Ukraine

DOI:

https://doi.org/10.15330/pcss.16.4.654-657

Keywords:

gallium selenide, jumper conductivity, dielectric constant

Abstract

The structure, electrical and dielectric properties of hydrogenated gallium selenide crystals were investigated. It was shown that AC-conduction mechanism along the crystallographic axis C in the 103–105 Hz have hopping character. The parameters of the band theory of hopping conduction were calculated. The frequency dependence of ε' and ε'' components of permittivity in HxGaSe were obtained.

References

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Published

2015-12-15

How to Cite

Kaminskii, V., Netyaga, V. V., Kovalyuk, Z. D., Boledzyuk, V. B., Ivanov, V. I., & Bratanich, T. I. (2015). Low-Impedance Investigations of Hydrogenated GaSe Layered Crystals. Physics and Chemistry of Solid State, 16(4), 654–657. https://doi.org/10.15330/pcss.16.4.654-657

Issue

Vol. 16 No. 4 (2015)

Section

Scientific articles
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