Luminescence Centers in Thin Films of ZnGa2O4

O. M. Bordun; I. Y. Kukharskyy; B. O. Bordun

doi:10.15330/pcss.16.1.74-78

Authors

O. M. Bordun Ivan Franko National University of Lviv
I. Y. Kukharskyy Ivan Franko National University of Lviv
B. O. Bordun Ivan Franko National University of Lviv

DOI:

https://doi.org/10.15330/pcss.16.1.74-78

Keywords:

zinc gallate, thin films, luminescence, spectrum, energy levels

Abstract

Photoexcitation spectra and luminescence of thin films of ZnGa₂O₄under photo-, cathode and X-ray excitation were investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. Emission bands with maximums at 3.35, 2.85, 2.50 and 2.38 eV were referred to the luminescence at the expense of electronic transitions between ⁴Т₂, ⁴Т₁, ²Е and ⁴А₂ terms in octahedral complexes (GaO₆)^9–. It was proposed an energy level diagram with corresponding electronic transitions in such structure. Luminescence band with maximum at 1.75 eV is attributed to oxygen vacancies.

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