Vapor Phase Condensation for Photovoltaic CdTe Films

R. S.  Yavorskyi; Z. R. Zapukhlyak; Ya. S. Yavorskyi; L. I. Nykyruy

doi:10.15330/pcss.18.4.416

Authors

R. S. Yavorskyi Vasyl Stefanyk Precarpathian National University; Rzeszow University
Z. R. Zapukhlyak Vasyl Stefanyk Precarpathian National University; Rzeszow University
Ya. S. Yavorskyi Vasyl Stefanyk Precarpathian National University
L. I. Nykyruy Vasyl Stefanyk Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.18.4.416

Keywords:

cadmium telluride, thin films, nanostructures, growth processes

Abstract

Thin films of CdTe were obtained by vapor phase condensation, namely by open vacuum evaporation, using different technological factors, in particular, different thickness (different time of deposition t) d = (540 -2835) nm, deposition temperature Td = 200°C and evaporator temperature Te (500 - 600)°C. The films were deposited on silicon substrates. The morphology of thin film condensates is determined on the basis of ASM and SEM studies analysis. Were received dependencies of average roughness and root mean square roughness from the material of substrate and film thickness. It was established that the growth of surface nanostructures is determined by Strankі-Krastanov mechanism.

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