Scattering of Charge Carriers in Thin Films PbTe:Bi
DOI:
https://doi.org/10.15330/pcss.20.2.171-174Keywords:
Lead telluride, doping, scattering of charge carriers, mobilityAbstract
The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thickness dependence of the ratio msurf/mbulk is considered.
References
J. Mao, Z. Liu, Z. Ren, Quant. Mater., 1, 16028 (2016) (https://doi.org/10.1038/npjquantmats.2016.28).
Chao HAN, et al., Advanced Energy Materials, 6(15), 1600498 (2016) (https://doi.org/10.1002/aenm.201600498).
G. Bulman, P. Barletta, J. Lewis, N. Baldasaro, M. Manno, A. Bar-Cohen, B. Yang, Nature communications, 7, 10302 (2016) (https://doi.org/10.1038/ncomms10302).
Ihtesham Chowdhury, et al., Nature nanotechnology, 4.4: 235 (2009).
R. Venkatasubramanian, et al., Thin-film thermoelectric devices with high roomtemperature figures of merit. (Materials for Sustainable Energy, 2011).
L.D. Hicks, & M.S. Dresselhaus, Physical Review B, 47(19), 12727 (1993).
Y. Lan, A.J. Minnich, G. Chen, Z. Ren, Advanced Functional Materials, 20(3), 357 (2010).
H. Alam, S. Ramakrishna, Nano energy, 2(2), 190 (2013).
D. Ding, D. Wang, M. Zhao, J. Lv, H. Jiang, C. Lu, Z. Tang, Advanced Materials, 29(1), 1603444 (2017) (https://doi.org/10.1002/adma.201603444).
I.A. Moskalyk, Physics and Chemistry of Solid State 16(4), 742 (2015) (doi:10.15330/pcss.16.4.742-746).
D.M. Zayachuk, FTP., 31(2), 217 (1997).
D.M. Freik, L.I. Nukuruy, R.O. Dzumedzey, O. Zub, Physics and Chemistry of Solid State 11(1), 62 (2010).
R.O. Dzumedzey, Physics and Chemistry of Solid State 12(1), 69 (2011).
L.I. Nukuruy, R.O. Dzumedzey, M.O. Galushak, T.P. Gevak, Yu.V. Bandura, Physics and Chemistry of Solid State 12(3), 589 (2011).
L.I. Nykyruy, O.M. Voznyak, Y.S. Yavorskiy, V.A. Shenderovskiy, R.O. Dzumedzey, O.B. Kostyuk, R.I. Zapukhlyak, Journal of Thermoelectricity, 3, 15 (2018).