Distribution of excess charge carriers in bilateral macroporous silicon with the same thickness of porous layers

V.F. Onyshchenko

doi:10.15330/pcss.23.1.159-164

Authors

V.F. Onyshchenko V.Ye. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

DOI:

https://doi.org/10.15330/pcss.23.1.159-164

Keywords:

bilateral macroporous silicon, porous silicon, excess charge carriers

Abstract

In this work, to calculate the distribution of the excess minority carrier concentration in bilateral macroporous silicon, the solution of the diffusion equation for stationary conditions is used, which is written for a monocrystalline substrate and macroporous layers. The solution to the diffusion equation is supplemented by boundary conditions at the interface between macroporous layers and a monocrystalline substrate and at the boundaries of a bilateral macroporous silicon sample. The dependence of the distribution of the excess minority carrier concentration in bilateral macroporous silicon with the same thickness of porous layers on the depth of macropores, the thickness of the sample of bilateral macroporous silicon, and the bulk lifetime of minority charge carriers is calculated. It is shown that the distribution function of the excess minority carrier concentration in bilateral macroporous silicon exhibits two maxima. The maxima are located in the frontal macroporous layer, near the surface of the sample, and in a monocrystalline substrate, near the interface, the frontal macroporous layer - monocrystalline substrate.

References

M. Ernst, R. Brendel, R. Ferre, N.P. Harder, Physic Status Solidi – Rapid Research Letters 6(5), 187 (2012); https://doi.org/10.1002/pssr.201206113.

A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, V.M. Vlasyuk, I.O. Sokolovskyi, B.F. Dvernikov, V.V. Chernenko, and M. Evstigneev, Semiconductor Physics, Quantum Electronics and Optoelectronics 24(2), 175 (2021); https://doi.org/10.15407/spqeo24.02.175.

A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, V.M. Vlasiuk, I.O. Sokolovskyi, B.F. Dvernikov, V.V. Chernenko, M.A. Evstigneev, Semiconductor Physics, Quantum Electronics and Optoelectronics 24(3), 319 (2021); https://doi.org/10.15407/spqeo24.03.319.

V.F. Onyshchenko, L.A. Karachevtseva, M.I. Karas’, Emerging Science journal 4(3), 192 (2020); https://doi.org/10.28991/esj-2020-01223.

L.A. Karachevtseva, V.F. Onyshchenko, A.V. Sachenko, Ukrainian Journal of Physics 53(9), 874 (2008).

L. Karachevtseva, M. Karas’, V. Onishchenko, F. Sizov, Proceedings of SPIE 5360, 381 (2004); https://doi.org/10.1117/12.530446.

M. Ernst, R. Brendel, Solar Energy Materials and Solar Cells 95(4), 1197 (2011); https://doi.org/10.1016/j.solmat.2011.01.017.

L. Karachevtseva, M. Kartel, V Kladko, O. Gudymenko, Wang Bo, V. Bratus, O. Lytvynenko, V Onyshchenko, O. Stronska, Applied Surface Science 434, 142 (2018); https://doi.org/10.1016/j.apsusc.2017.10.029.

V.F. Onyshchenko, L.A. Karachevtseva, Semiconductor Physics, Quantum Electronics & Optoelectronics 23(1), 29 (2020); https://doi.org/10.15407/spqeo23.01.29.

P.O. Gentsar, A.V. Stronski, L.A. Karachevtseva, V.F. Onyshchenko, Physics and Chemistry of Solid State 22(3), 453 (2021); https://doi.org/10.15330/pcss.22.3.453-459.