Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe
DOI:
https://doi.org/10.15330/pcss.17.4.507-510Keywords:
InSe, layered crystals, heterojunction, AFM-images spectral characteristicsAbstract
We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.
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[2] V. L. Bakumenko, Z. D. Kovaljuk, L. N. Kurbatov, V. G. Tagaev, V. F. Chishko, FTP 14 (6), 1115 (1980).
[3] Z. D. Kovaljuk, Fizicheskie osnovy poluprovodnikovogo materialovedenija (Kiev, Naukova dumka, 1986).
[4] V. N. Katerinchuk, Z. R. Kudrinskij, Z. D. Kovaljuk, FTP 49 (5), 612 (2015).
[5] A. K. Geim and I. V. Grigorieva, Van der Waals heterostructures (Manchester, Nature, 2013) v. 499, p. 419.
[6] K. S. Novoselov, A. H. Castro Neto, Phys. Scr. 146, 014006 (2012).
[7] A. G. Milnes, D. L. Feucht. Heterojunction and metal-semiconductor junction (New York, Academic Press, 1972).
[8] N. Balakrishnan, Z. R. Kudrynskyi, M. W. Fay, G. W. Mudd, S. A. Svatek, O. Makarovsky, Z. D. Kovalyuk, L. Eaves, P. H. Beton, A. Patanu, Advanced Optical Materials 2(11), 1064 (2014).
[9] V. M. Katerinchuk, Z. D. Kovaljuk, M. V. Tovarnic'kij, Ukr. fіz. zh. 45(1), 87 (2000).
[10] K. Davletov, F. Ragimov, FTP 16(9), 1631 (1982).
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Published
2016-12-15
How to Cite
Katerynchuk, V., Litvin, O., Kudrynskyi, Z., Kovalyuk, Z., Tkachuk, I., & Kushnir, B. (2016). Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe. Physics and Chemistry of Solid State, 17(4), 507–510. https://doi.org/10.15330/pcss.17.4.507-510
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Scientific articles
