Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure

Authors

  • V.V. Romaka National University “Lvivska Politechnika”
  • P. Rogl Institut fur Physikalische Chemie, Universitet Wien
  • L.P. Romaka Ivan Franko National University of Lviv
  • Yu.V. Stadnyk Ivan Franko National University of Lviv
  • R.O. Korzh National University “Lvivska Politechnika”
  • V.Ya. Krayovskyy National University “Lvivska Politechnika”
  • T.M. Kovbasuk National University “Lvivska Politechnika”
  • H.V. Tsygylyk National University “Lvivska Politechnika”

DOI:

https://doi.org/10.15330/pcss.16.2.335-340

Keywords:

semiconductor, electrical conduction, electronic structure

Abstract

The peculiarities of the crystalandelectronicstructureof V1-xTixFeSb, х = 0 – 0,20, semiconductor solid solution wereinvestigated. Themechanismofgenerationofstructuraldefectsofacceptoranddonornatureisdescribed. In particular the nature of donors in n-VFeSb was established (“a priori doping”) as a result of presence of vacancies in Sb atomic site (4b). The obtained result lays in the basis of the technology for obtaining thermoelectric materials based on n-VFeSb with maximal efficiency of thermal to electrical energy conversion.

References

[1] V. A. Romaka, P. Rogl', Ju. V. Stadnik,D. Kacharovs'kij, L. P. Romaka, R. O. Korzh, V. Ja. Krajovs'kij, A. M.
Gorin', Fіz. hіm. tv. tіla, (napravlena do druku 04.2014 r.).
[2] V. V. Romaka, P. Rogl, L. Romaka, Yu. Stadnyk, A. Grytsiv, O. Lakh, V. Krayovsky, Intermetallics 35, 45 (2013).
[3] V. A. Romaka, V. V. Romaka, Ju. V. Stadnik, Іntermetalіchnі napіvprovіdniki; vlastivostі ta zastosuvannja (L'vіvs'ka polіtehnіka, L'vіv, 2011).
[4] B. I. Shklovskij, A. L. Jefros, Jelektronnye svojstva legirovannyh poluprovodnikov (Nauka, Moskva, 1979).
[5] T. Roisnel, J. Rodriguez-Carvajal, Mater. Sci. Forum, Proc. EPDIC7 378-381, 118 (2001).
[6] M. Schroter, H. Ebert, H. Akai, P. Entel, E. Hoffmann, G. G. Reddy, Phys. Rev. B 52, 188 (1995).
[7] V. L. Moruzzi, J. F. Janak, A. R. Williams, Calculated electronic properties of metals (Pergamon Press, NY, 1978).
[8] Chenguang Fu, Hanhui Xie, Yintu Liu, T. J. Zhu, Jian Xie, X. B. Zhao, Intermetallics 32, 39 (2013).

Published

2015-06-15

How to Cite

Romaka, V., Rogl, P., Romaka, L., Stadnyk, Y., Korzh, R., Krayovskyy, V., … Tsygylyk, H. (2015). Investigation of V1-xTixFeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure. Physics and Chemistry of Solid State, 16(2), 335–340. https://doi.org/10.15330/pcss.16.2.335-340

Issue

Section

Scientific articles

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